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| MPSA06 / MMBTA06 / PZTA06 Discrete POWER & Signal Technologies MPSA06 MMBTA06 C PZTA06 C E C BE E C B TO-92 SOT-23 Mark: 1G B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 4.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA06 625 5.0 83.3 200 Max *MMBTA06 350 2.8 357 **PZTA06 1,000 8.0 125 Units mW mW/ C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2 . (c) 1997 Fairchild Semiconductor Corporation MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICEO ICBO Collector-Emitter Sustaining Voltage* Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current I C = 1.0 mA, IB = 0 I E = 100 A, IC = 0 VCE = 60 V, IB = 0 VCB = 80 V, IE = 0 80 4.0 0.1 0.1 V V A A ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 10 mA, VCE = 1.0 V I C = 100 mA, VCE = 1.0 V I C = 100 mA, IB = 10 mA I C = 100 mA, VCE = 1.0 V 100 100 0.25 1.2 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 2.0 V, f = 100 MHz 100 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0 Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5 Vtf=4 Xtf=6 Rb=10) Typical Characteristics V CESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 200 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 0.2 0.1 - 40 C VCE = 1V = 10 150 25 C 125 C 100 - 40 C 25 C 50 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P 33 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) P 33 1000 MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) 1 = 10 VBEON - BASE EMITTER ON VOLTAGE (V) V BESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 VCE = 5V - 40 C 25 C 125 C 0.8 - 40 C 25 C 125 C 0.6 0.4 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 100 I C - COLLECTOR CURRENT (mA) P 33 1000 V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 10 V 1 CB Collector Saturation Region 2 T A = 25C = 80 V 1.5 1 0.1 0.01 0.5 IC = 1 mA 10 mA 100 mA 0.001 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) P 33 125 0 4000 10000 20000 30000 50000 I B - BASE CURRENT (uA) BVCER - BREAKDOWN VOLTAGE (V) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 117 Input and Output Capacitance vs Reverse Voltage 100 f = 1.0 MHz CAPACITANCE (pF) C ib 10 116 115 114 113 112 111 0.1 C ob 1 1 RESISTANCE (k ) 10 100 1000 0.1 0.1 1 10 100 V CE - COLLECTOR VOLTAGE(V) MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 400 350 300 250 200 150 100 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) Vce = 5V 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 1 10 20 50 100 0 25 I C - COLLECTOR CURRENT (mA) 50 75 100 o TEMPERATURE ( C) 125 150 |
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